Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO2/Al2O3/HfO2 Based Memristor on ITO Electrode

Transparent Multi-level Resistive Switching Phenomena Observed in ITO/RGO/ITO Memory Cells by the Sol-Gel Dip-Coating Method

A reduced graphene oxide (RGO)-based transparent electronic memory cell with multi-level resistive switching (RS) was successfully realized by a dip-coating method. Using ITO/RGO/ITO structures, the memory device exhibited a transmittance above 80% (including the substrate) in the visible region and multi-level RS behavior in the 00, 01, 10, and 11 states by varying the pulse height from 2 V to...

A forming-free bipolar resistive switching behavior based on ITO/V2O5/ITO structure

Enhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layer

An enhanced resistive switching (RS) effect is observed in Pt/BaTiO3(BTO)/ITO ferroelectric structures when a thin HfO2:Al2O3 (HAO) dielectric layer is inserted between Pt and BTO. The P-E hysteresis loops reveal the ferroelectric nature of both Pt/BTO/ITO and Pt/HAO/BTO/ITO structures. The relation between the RS and the polarization reversal is investigated at various temperatures in the Pt/H...

Boosting the performance of resistive switching memory with a transparent ITO electrode using supercritical fluid nitridation

A low temperature supercritical fluid nitridation (SCF-nitridation) technique was investigated to dope nitrogen into a indium-tin-oxide (ITO) electrode to boost the performance of hafnium oxide resistive random access memory (RRAM). After the SCF-nitridation treatment, the memory window for the N:ITO electrode device was increased from 40 to 100. Moreover, the operation voltages (VSET and VRESE...

Resistive switching characteristics of MnOx-based ReRAM

The resistive switching characteristics of MnOx thin film were investigated for resistive random access memory (ReRAM) applications. The devices in the form of metal–insulator–metal structure exhibited reversible resistive switching behaviour under both sweeping voltages and voltage pulses. Formation and rupture of conductive filaments were proposed to explain the resistive switching. When Al w...